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1

Characteristics of Schottky barrier silicon nanocluster floating gate flash memory

Daeho Son, Jeongho Kim, Kyungsu Lee, Sunghwan Won, Eunkyeom Kim, Tae-Youb Kim, Moongyu Jang, Kyoungwan Park

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 684 KB

english, 2011

2

The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Moongyu Jang, Seongjae Lee

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 782 KB

english, 2012

3

Conductivity enhancement of silicon nanowires

Jae-Woo Ko, Seongju Park, Xianhong Li, In-Bok Baek, Seongjae Lee, Moongyu Jang

Journal:

Journal of the Korean Physical Society

Year:

2012

Language:

english

File:

PDF, 240 KB

english, 2012

4

Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors

Choi, Sung-Jin, Han, Jin-Woo, Jang, Moongyu, Choi, Cheljong, Choi, Yang-Kyu

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 574 KB

english, 2009

5

Optimization of the thermoelectric power factors in 50-nm n- and p-type silicon nanowires by varying the doping concentration

Kim, Soojung, Kim, Jaehyeon, Choi, Wonchul, Sung, Gun Yong, Jang, Moongyu

Journal:

Journal of the Korean Physical Society

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

6

Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model

Jang, Moongyu, Lee, Junghwan

Journal:

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

7

Schottky barrier heights of n/p-type erbium-silicided schottky diodes

Myungsim Jun, Yarkyeon Kim, Cheljong Choi, Taeyoub Kim, Soonyoung Oh, Moongyu Jang

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 127 KB

english, 2008

8

Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Seongjae Lee

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 145 KB

english, 2004

9

The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Moongyu Jang, Youngsam Park, Myungsim Jun, Younghoon Hyun, Sung-Jin Choi, Taehyoung Zyung

Journal:

Nanoscale Research Letters

Year:

2010

Language:

english

File:

PDF, 347 KB

english, 2010

10

-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS

Moongyu Jang, Yarkyeon Kim, Myungsim Jeon, Cheljong Choi, Inbok Baek, Seongjae Lee, Byoungchul Park

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 306 KB

english, 2006

11

P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

Sung-Jin Choi, Jin-Woo Han, Dong-Il Moon, Sungho Kim, Moongyu Jang, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 879 KB

english, 2010

12

Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

Sung-Jin Choi, Jin-Woo Han, Sungho Kim, Dong-Il Moon, Moongyu Jang, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 601 KB

english, 2010

13

Analysis of Transconductance in Schottky-Barrier MOSFETs

Sung-Jin Choi, Chel-Jong Choi, Jee-Yeon Kim, Moongyu Jang, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 720 KB

english, 2011

14

Simulation of Schottky barrier tunnel transistor using simple boundary condition

Jang, Moongyu, Kang, Kicheon, Lee, Seongjae, Park, Kyoungwan

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 362 KB

english, 2003

15

[IEEE 4th IEEE Conference on Nanotechnology, 2004. - Munich, Germany (16-19 Aug. 2004)] 4th IEEE Conference on Nanotechnology, 2004. - Quantum simulation of nano-scale Schottky barrier MOSFETs

Mincheol Shin,, Moongyu Jang,, Seonjae Lee,

Year:

2004

Language:

english

File:

PDF, 213 KB

english, 2004

16

Modified ion sensitive field effect transistor sensors having an extended gate on a thick dielectric

Ahn, Chang-Geun, Kim, Ansoon, Park, Chan Woo, Ah, Chil Seong, Yang, Jong-Heon, Kim, Tae-Youb, Jang, Moongyu, Sung, Gun Yong

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 627 KB

english, 2010

17

Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide

Shin, Jin-Wook, Cho, Won-Ju, Choi, Chel-Jong, Jang, Moongyu

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 558 KB

english, 2009

18

Analysis of Trapped Charges in Dopant-Segregated Schottky Barrier-Embedded FinFET SONOS Devices

Sung-Jin Choi,, Jin-Woo Han,, Moongyu Jang,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 480 KB

english, 2009

19

Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Jang, Moongyu, Jun, Myungsim, Zyung, Taehyoung

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 474 KB

english, 2010

20

Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process

Yun, Hyung-Joong, Jang, Moongyu, Choi, Sung-Jin, Lee, Young-Boo, Ahn, Kwang-Soon, Choi, Chel-Jong

Journal:

Journal of Alloys and Compounds

Year:

2013

Language:

english

File:

PDF, 822 KB

english, 2013

21

Characterization of erbium-silicided Schottky diode junction

Moongyu Jang,, Yarkyeon Kim,, Jaeheon Shin,, Seongjae Lee,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 126 KB

english, 2005

22

High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

Jun, Myungsim, Park, Youngsam, Hyun, Younghoon, Zyung, Taehyoung, Jang, Moongyu, Choi, Sung-Jin

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 550 KB

english, 2011

23

Erbium silicided n-type schottky barrier tunnel transistors for nanometer regime applications

Moongyu Jang,, Seongjae Lee,, Kyoungwan Park,

Journal:

IEEE Transactions on Nanotechnology

Year:

2003

Language:

english

File:

PDF, 243 KB

english, 2003

24

-Type Flash Memory Device

Sung-Jin Choi,, Jin-Woo Han,, Dong-Il Moon,, Moongyu Jang,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 392 KB

english, 2010

25

Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions

Shin, Jin-Wook, Choi, Chel-Jong, Jang, Moongyu, Cho, Won-Ju

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

26

[IEEE 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO) - Ilsan, Gyeonggi-Do, Korea (South) (2010.08.17-2010.08.20)] 10th IEEE International Conference on Nanotechnology - Schottky barrier single electron and single hole transistors

Moongyu Jang,, Myungsim Jun,, Taehyoung Zyung,, Youngsam Park,, Younghoon Hyun,

Year:

2010

Language:

english

File:

PDF, 2.32 MB

english, 2010

27

High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Sung-Jin Choi,, Jin-Woo Han,, Sungho Kim,, Dong-Il Moon,, Moongyu Jang,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

28

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory

Choi, Sung-Jin, Han, Jin-Woo, Kim, Sungho, Moon, Dong-Il, Jang, Moongyu, Choi, Yang-Kyu

Year:

2010

Language:

english

File:

PDF, 1.13 MB

english, 2010

29

[IEEE 2009 IEEE Sensors - Christchurch, New Zealand (2009.10.25-2009.10.28)] 2009 IEEE Sensors - Modified ISFETs having an extended gate on the thick dielectric

Ahn, Chang-Geun, Park, Chan Woo, Kim, Ansoon, Yang, Jong-Heon, Ah, Chil Seong, Kim, Taeyoub, Jang, Moongyu, Sung, Gun Yong

Year:

2009

Language:

english

File:

PDF, 752 KB

english, 2009

30

Quantum simulation of resonant tunneling in nanoscale tunnel transistors

Shin, Mincheol, Jang, Moongyu, Lee, Seongjae

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

31

Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes

Jun, Myungsim, Jang, Moongyu, Kim, Yarkeon, Choi, Cheljong, Kim, Taeyoub, Oh, Soonyoung, Lee, Seongjae

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2008

Language:

english

File:

PDF, 395 KB

english, 2008

32

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - High performance Schottky barrier MOSFETs with workfunction engineering

Jang, Moongyu, Kim, Yarkyeon, Jun, Myungsim, Choi, Cheljong

Year:

2008

Language:

english

File:

PDF, 1.35 MB

english, 2008

33

Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Jang, Moongyu, Oh, Jihun, Maeng, Sunglyul, Cho, Wonju, Lee, Seongjae, Kang, Kicheon, Park, Kyoungwan

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 271 KB

english, 2003

34

[IEEE 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC 2011) - Jeju (2011.10.18-2011.10.21)] 2011 IEEE Nanotechnology Materials and Devices Conference - Temperature distribution analysis of silicon nanowire for thermoelectric applications

Younghoon Hyun,, Youngsam Park,, Wonchul Choi,, Taehyoung Zyung,, Moongyu Jang,

Year:

2011

Language:

english

File:

PDF, 122 KB

english, 2011

35

Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology

Hyun, Younghoon, Park, Youngsam, Choi, Wonchul, Kim, Jaehyeon, Zyung, Taehyoung, Jang, Moongyu

Journal:

Year:

2012

Language:

english

File:

PDF, 1.81 MB

english, 2012

36

Platinum Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique

Moon, Ran-Ju, Jeong, Myeong-II, Jagdeesh Chandra, S. V., Shim, Kyu-Hwan, Jang, Moongyu, Hong, Hyo-Bong, Chang, Sung-Yong, Choi, Chel-Jong

Journal:

Journal of The Electrochemical Society

Year:

2009

Language:

english

File:

PDF, 706 KB

english, 2009

37

Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field- Effect Transistors

Jang, Moongyu, Kim, Yarkyeon, Shin, Jaeheon, Park, Kyoungwan, Lee, Seongjae

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 188 KB

english, 2004

38

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

Choi, Wonchul, Jun, Dongseok, Kim, Soojung, Shin, Mincheol, Jang, Moongyu

Journal:

Year:

2015

Language:

english

File:

PDF, 1.03 MB

english, 2015

39

Pre-silicidation annealing effect on platinum-silicided Schottky barrier MOSFETs

Jun, Myungsim, Choi, Chel-Jong, Choi, Sung-Jin, Park, Youngsam, Hyun, Younghoon, Zyung, Taehyoung, Jang, Moongyu

Journal:

Semiconductor Science and Technology

Year:

2011

Language:

english

File:

PDF, 521 KB

english, 2011

40

Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory

Park, Young-Sam, Lee, Seung-Yun, Jang, Moongyu, Yoon, Sung-Min

Journal:

Electronics Letters

Year:

2012

Language:

english

File:

PDF, 317 KB

english, 2012

41

Ambipolar Carrier Injection Characteristics of Erbium-Silicided n -Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors

Jang, Moongyu, Kim, Yarkyeon, Jeon, Myungsim, Choi, Cheljong, Park, Byoungchul, Lee, Seongjae

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 555 KB

english, 2006

42

Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt–Er Alloy Metal Gate on HfO 2 Film

Choi, Cheljong, Jang, Moongyu, Kim, Yarkyeon, Jun, Myungsim, Kim, Taeyoub, Park, Byoungchul, Lee, Seongjae, Yang, Hyundoek, Jung, Ranju, Chang, Man, Hwang, Hyunsang

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

43

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications

Jun, Dongsuk, Kim, Soojung, Choi, Wonchul, Kim, Junsoo, Zyung, Taehyoung, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2015

Language:

english

File:

PDF, 2.88 MB

english, 2015

44

Carrier Transport Properties of Bilayer Graphene Obtained via Hall Measurements

Jeon, Hyojin, Park, Bae Ho, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

45

Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient

Choi, Wonchul, Park, Young-Sam, Hyun, Younghoon, Zyung, Taehyoung, Kim, Jaehyeon, Kim, Soojung, Jeon, Hyojin, Shin, Mincheol, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2013

File:

PDF, 1.85 MB

2013

46

Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient

Choi, Wonchul, Park, Young-Sam, Hyun, Younghoon, Zyung, Taehyoung, Kim, Jaehyeon, Kim, Soojung, Jeon, Hyojin, Shin, Mincheol, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2013

Language:

english

File:

PDF, 1.85 MB

english, 2013

47

Selected Peer-Reviewed Papers from NANO KOREA 2009

Lee, Seongjae, Han, Il Ki, Kim, Eun Kyu, Rhee, Joo Yull, Yoon, Euijoon, Cheong, Hyeonsik, Choi, Kyoung Jin, Suh, Minah, Jang, Moongyu, Yun, Wan Soo, Chang, Won-Seok

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2011

Language:

english

File:

PDF, 702 KB

english, 2011

48

Electronic Transport of Lateral PtSi/n/n+-Si Schottky Diodes

Li, Xianhong, Baek, In-Bok, Lee, Seongjae, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2012

Language:

english

File:

PDF, 1.66 MB

english, 2012

49

Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach

Kim, Jaehyeon, Hyun, Younghoon, Park, Youngsam, Choi, Wonchul, Kim, Soojung, Jeon, Hyojin, Zyung, Taehyeong, Jang, Moongyu

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2013

Language:

english

File:

PDF, 1.75 MB

english, 2013

50

Top-Down Processed Silicon Nanowires for Thermoelectric Applications

Jang, Moongyu, Park, Youngsam, Hyun, Younghoon, Jun, Myungsim, Choi, Sung-Jin, Zyung, Taehyung, Kim, Jong-Dae

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2012

Language:

english

File:

PDF, 4.21 MB

english, 2012